CSD86330Q3D

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Manufacturer part number:CSD86330Q3D

Manufacturer:Texas Instruments

Description:CSD86330Q3D datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD86330Q3D Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerLDFN
Number of Pins	8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Max Power Dissipation	6W
Peak Reflow Temperature (Cel)	260
Number of Functions	1
Supply Voltage	12V
Terminal Pitch	0.65mm
Base Part Number	CSD86330
Pin Count	8
Supply Voltage-Max (Vsup)	22V
Element Configuration	Dual
Power Dissipation	6W
Turn On Delay Time	5.3 ns
FET Type	2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs	9.6m Ω @ 14A, 8V
Vgs(th) (Max) @ Id	2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	920pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs	6.2nC @ 4.5V
Drain to Source Voltage (Vdss)	25V
Turn-Off Delay Time	15.8 ns
Continuous Drain Current (ID)	20A
Threshold Voltage	1.4V
Gate to Source Voltage (Vgs)	8V
Input Characteristics	STANDARD
Interface IC Type	BUFFER OR INVERTER BASED MOSFET DRIVER
Drain to Source Breakdown Voltage	25V
FET Feature	Logic Level Gate
High Side Driver	NO
Nominal Vgs	1.4 V
Height	1.5mm
Length	3.3mm
Width	3.3mm
Thickness	1.5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead