SIA931DJ-T1-GE3

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Manufacturer part number:SIA931DJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET -30V [email protected] -4.5A P-CH

Case Package:SOT-23

Datasheet:SIA931DJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Number of Pins	6
Manufacturer Package Identifier	C-07431-DUAL
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Max Power Dissipation	7.8W
Number of Channels	2
Element Configuration	Dual
Power Dissipation	1.9W
Turn On Delay Time	8 ns
FET Type	2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs	65m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	445pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4.5A
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	18ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	-4.3A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-30V
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	800μm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant