SIZ300DT-T1-GE3

new-10%

Manufacturer part number:SIZ300DT-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 11A/28A 16.7/31W 24mohm/11mohm @ 10V

Case Package:SOT-23

Datasheet:SIZ300DT-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Max Power Dissipation	31W
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SIZ300
Pin Count	8
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN SOURCE
Power - Max	16.7W 31W
FET Type	2 N-Channel (Half Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	24m Ω @ 9.8A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 15V
Current - Continuous Drain (Id) @ 25°C	11A 28A
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	80ns
Fall Time (Typ)	40 ns
Continuous Drain Current (ID)	28A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	11A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	30A
Avalanche Energy Rating (Eas)	7 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	750μm
Length	3mm
Width	3mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free