FDMA2002NZ           Description

   The device is a single package solution specially designed to meet the dual switching requirements of cellular phones and other ultra-portable applications. It has two independent N-channel MOSFET with low on-resistance and minimum on-loss. MicroFET 2x2 provides excellent thermal performance in terms of its physical size, making it ideal for linear mode applications.

FDMA2002NZ                Features

2.9 A, 30 V

RDS(ON) = 123 m|? @ VGS = 4.5 V

RDS(ON) = 140 m|? @ VGS = 3.0 V

RDS(ON) = 163 m|? @ VGS = 2.5 V

Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm

HBM ESD protection level=1.8kV (Note 3)

RoHS Compliant

Free from halogenated compounds and antimonyoxides

FDMA2002NZ            Applications

This product is general usage and suitable for many different applications.