SI9933CDY-T1-E3

new-10%

Manufacturer part number:SI9933CDY-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 20V 4.0A 3.1W 58mohm @ 4.5V

Case Package:SOT-23

Datasheet:SI9933CDY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Operating Temperature	-50°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	58MOhm
Subcategory	Other Transistors
Max Power Dissipation	470mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI9933
Pin Count	8
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	21 ns
Power - Max	3.1W
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	58m Ω @ 4.8A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	665pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4A
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Rise Time	50ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	29 ns
Continuous Drain Current (ID)	-4A
Threshold Voltage	-1.4V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	4A
Drain to Source Breakdown Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.55mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free