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EPC2106

EPC2106

EPC2106

EPC

GANFET TRANS SYM 100V BUMPED DIE

SOT-23

EPC2106 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series eGaN®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 5V
Vgs(th) (Max) @ Id 2.5V @ 600μA
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 50V
Current - Continuous Drain (Id) @ 25°C 1.7A
Gate Charge (Qg) (Max) @ Vgs 0.73nC @ 5V
Drain to Source Voltage (Vdss) 100V
FET Feature GaNFET (Gallium Nitride)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.78400 $1.568

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