DMN601DWK-7

new-10%

Manufacturer part number:DMN601DWK-7

Manufacturer:Diodes Incorporated

Description:MOSFET Dual N-Channel

Case Package:SOT-23

Datasheet:DMN601DWK-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	6.010099mg
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	2Ohm
Additional Feature	LOW CAPACITANCE
Subcategory	FET General Purpose Powers
Voltage - Rated DC	60V
Max Power Dissipation	200mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	305mA
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	DMN601DWK
Pin Count	6
Reference Standard	AEC-Q101
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Continuous Drain Current (ID)	305mA
Threshold Voltage	1.6V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.305A
Drain to Source Breakdown Voltage	60V
Dual Supply Voltage	60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	1.6 V
Feedback Cap-Max (Crss)	5 pF
Height	1mm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free