ZXMN3AM832TA

new-10%

Manufacturer part number:ZXMN3AM832TA

Manufacturer:Diodes Incorporated

Description:MOSFET Dl 30V N Chnl UMOS

Case Package:SOT-23

Datasheet:ZXMN3AM832TA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Number of Pins	8
Weight	299.994654mg
Packaging	Cut Tape (CT)
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	120mOhm
Terminal Finish	Matte Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Max Power Dissipation	1.13W
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Current Rating	3A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	10
Qualification Status	Not Qualified
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3W
Turn On Delay Time	1.7 ns
Transistor Application	SWITCHING
Rise Time	2.3ns
Drain to Source Voltage (Vdss)	30V
Polarity/Channel Type	N-CHANNEL
Fall Time (Typ)	2.9 ns
Turn-Off Delay Time	6.6 ns
Continuous Drain Current (ID)	3.7A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	190pF
FET Technology	METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance	180mOhm
Rds On Max	120 mΩ
Height	1mm
Length	3mm
Width	2mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free