IRF7103TRPBF

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IRF7103TRPBF

Manufacturer part number:IRF7103TRPBF

Manufacturer:Infineon Technologies

Description:IRF7103TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF7103TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Manufacturer Package Identifier	IRF7103TRPBF
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	130mOhm
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	50V
Max Power Dissipation	2W
Terminal Form	GULL WING
Current Rating	3A
Base Part Number	IRF7103PBF
Number of Elements	2
Row Spacing	6.3 mm
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	5.1 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	130m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	8ns
Fall Time (Typ)	25 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	3A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	3A
Drain to Source Breakdown Voltage	50V
Dual Supply Voltage	50V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Recovery Time	100 ns
FET Feature	Standard
Nominal Vgs	3 V
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free