KSC1815GRTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 6V.The collector emitter saturation voltage is 100mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 150mA for this device.A maximum collector current of 150mA volts can be achieved.
KSC1815GRTA Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
KSC1815GRTA Applications
There are a lot of ON Semiconductor KSC1815GRTA applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
