ZXTP19060CFFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTP19060CFFTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-3 Flat Leads
Number of Pins
3
Weight
48.789529mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Frequency
180MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTP19060C
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Power - Max
1.5W
Transistor Application
SWITCHING
Gain Bandwidth Product
180MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
270mV @ 400mA, 4A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
180MHz
Collector Emitter Saturation Voltage
75mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
-7V
Continuous Collector Current
-4A
Turn Off Time-Max (toff)
524.2ns
Height
1mm
Length
3mm
Width
1.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.170338
$0.170338
10
$0.160696
$1.60696
100
$0.151600
$15.16
500
$0.143019
$71.5095
1000
$0.134923
$134.923
ZXTP19060CFFTA Product Details
ZXTP19060CFFTA Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 75mV, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 270mV @ 400mA, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at -4A.Emitter base voltages of -7V can achieve high levels of efficiency.In the part, the transition frequency is 180MHz.Input voltage breakdown is available at 60V volts.A maximum collector current of 4A volts is possible.
ZXTP19060CFFTA Features
the DC current gain for this device is 200 @ 100mA 2V a collector emitter saturation voltage of 75mV the vce saturation(Max) is 270mV @ 400mA, 4A the emitter base voltage is kept at -7V a transition frequency of 180MHz
ZXTP19060CFFTA Applications
There are a lot of Diodes Incorporated ZXTP19060CFFTA applications of single BJT transistors.