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2SCR346PT100P

2SCR346PT100P

2SCR346PT100P

ROHM Semiconductor

2SCR346PT100P datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SCR346PT100P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2015
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation500mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 500mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 10mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage400V
Max Breakdown Voltage 400V
RoHS StatusROHS3 Compliant
In-Stock:10505 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.535000$0.535
10$0.504717$5.04717
100$0.476148$47.6148
500$0.449196$224.598
1000$0.423770$423.77

2SCR346PT100P Product Details

2SCR346PT100P Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 82 @ 10mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 2mA, 20mA.Breakdown input voltage is 400V volts.Collector current can be as low as 100mA volts at its maximum.

2SCR346PT100P Features


the DC current gain for this device is 82 @ 10mA 10V
the vce saturation(Max) is 300mV @ 2mA, 20mA

2SCR346PT100P Applications


There are a lot of ROHM Semiconductor 2SCR346PT100P applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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