2SCR346PT100P datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SCR346PT100P Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
500mW
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
500mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
82 @ 10mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
400V
Max Breakdown Voltage
400V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.535000
$0.535
10
$0.504717
$5.04717
100
$0.476148
$47.6148
500
$0.449196
$224.598
1000
$0.423770
$423.77
2SCR346PT100P Product Details
2SCR346PT100P Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 82 @ 10mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 2mA, 20mA.Breakdown input voltage is 400V volts.Collector current can be as low as 100mA volts at its maximum.
2SCR346PT100P Features
the DC current gain for this device is 82 @ 10mA 10V the vce saturation(Max) is 300mV @ 2mA, 20mA
2SCR346PT100P Applications
There are a lot of ROHM Semiconductor 2SCR346PT100P applications of single BJT transistors.