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2SCR346PT100P

2SCR346PT100P

2SCR346PT100P

ROHM Semiconductor

2SCR346PT100P datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SCR346PT100P Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 500mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 500mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 10mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 400V
Max Breakdown Voltage 400V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.535000 $0.535
10 $0.504717 $5.04717
100 $0.476148 $47.6148
500 $0.449196 $224.598
1000 $0.423770 $423.77
2SCR346PT100P Product Details

2SCR346PT100P Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 82 @ 10mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 2mA, 20mA.Breakdown input voltage is 400V volts.Collector current can be as low as 100mA volts at its maximum.

2SCR346PT100P Features


the DC current gain for this device is 82 @ 10mA 10V
the vce saturation(Max) is 300mV @ 2mA, 20mA

2SCR346PT100P Applications


There are a lot of ROHM Semiconductor 2SCR346PT100P applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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