2N2222AUB Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.A collector emitter saturation voltage of 1V ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.Emitter base voltages of 6V can achieve high levels of efficiency.Supplier device package 3-SMD comes with the product.Detection of Collector Emitter Breakdown at 50V maximal voltage is present.A maximum collector current of 800mA volts is possible.
2N2222AUB Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of 3-SMD
2N2222AUB Applications
There are a lot of Microsemi Corporation 2N2222AUB applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
