2N5550RLRA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 10mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 5mA, 50mA.As a result, the part has a transition frequency of 100MHz.There is a 140V maximal voltage in the device due to collector-emitter breakdown.
2N5550RLRA Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
a transition frequency of 100MHz
2N5550RLRA Applications
There are a lot of Rochester Electronics, LLC 2N5550RLRA applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
