PHE13003A,412

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Manufacturer part number:PHE13003A,412

Manufacturer:WeEn Semiconductors

Description:PHE13003A,412 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

Case Package:SOT-23

Datasheet:PHE13003A,412 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature	150°C TJ
Packaging	Bulk
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Power - Max	2.1W
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 400mA 5V
Current - Collector Cutoff (Max)	1mA
Vce Saturation (Max) @ Ib, Ic	1.5V @ 250mA, 750mA
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	1A
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$0.151023	$0.151023
10	$0.142475	$1.42475
100	$0.134409	$13.4409
500	$0.126801	$63.4005
1000	$0.119624	$119.624

PHE13003A,412 Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 400mA 5V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 250mA, 750mA.There is a 400V maximal voltage in the device due to collector-emitter breakdown.