BST61,115 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 2000 @ 500mA 10V.As it features a collector emitter saturation voltage of 1.3V, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.3V @ 500μA, 500mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.In the part, the transition frequency is 200MHz.As a result, it can handle voltages as low as 60V volts.During maximum operation, collector current can be as low as 1A volts.

BST61,115 Features

the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

BST61,115 Applications

There are a lot of Nexperia USA Inc. BST61,115 applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting