BD438 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 500mA 1V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Single BJT transistor can be broken down at a voltage of 45V volts.Product comes in TO-225AA supplier package.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.Maximum collector currents can be below 4A volts.

BD438 Features

the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the supplier device package of TO-225AA

BD438 Applications

There are a lot of ON Semiconductor BD438 applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface