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JAN2N2906A

JAN2N2906A

JAN2N2906A

Microsemi Corporation

JAN2N2906A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N2906A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Number of Pins 3
Supplier Device Package TO-18
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Series Military, MIL-PRF-19500/291
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature200°C
Min Operating Temperature -65°C
Max Power Dissipation500mW
Number of Elements 1
Polarity PNP
Power Dissipation500mW
Power - Max 500mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 600mA
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:2088 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.616617$3.616617
10$3.411903$34.11903
100$3.218777$321.8777
500$3.036582$1518.291
1000$2.864700$2864.7

JAN2N2906A Product Details

JAN2N2906A Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 10V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.6V @ 50mA, 500mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Product comes in the supplier's device package TO-18.The device has a 60V maximal voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 600mA volts.

JAN2N2906A Features


the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of TO-18

JAN2N2906A Applications


There are a lot of Microsemi Corporation JAN2N2906A applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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