NSS60600MZ4T1G Overview

In this device, the DC current gain is 120 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -350mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 6V for high efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can take a breakdown input voltage of 60V volts.A maximum collector current of 6A volts is possible.

NSS60600MZ4T1G Features

the DC current gain for this device is 120 @ 1A 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 600mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

NSS60600MZ4T1G Applications

There are a lot of ON Semiconductor NSS60600MZ4T1G applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting