STGB7NB40LZT4

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Manufacturer part number:STGB7NB40LZT4

Manufacturer:STMicroelectronics

Description:STGB7NB40LZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB7NB40LZT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	VOLTAGE CLAMPING
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	100W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGB7
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	70W
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	100W
Transistor Application	AUTOMOTIVE IGNITION
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.9V
Max Collector Current	14A
Collector Emitter Breakdown Voltage	430V
Collector Emitter Saturation Voltage	1.5V
Turn On Time	5400 ns
Test Condition	300V, 46 Ω, 5V
Vce(on) (Max) @ Vge, Ic	1.9V @ 5V, 14A
Turn Off Time-Nom (toff)	8000 ns
Gate Charge	22nC
Td (on/off) @ 25°C	900ns/4.4μs
Gate-Emitter Voltage-Max	12V
Gate-Emitter Thr Voltage-Max	2.2V
RoHS Status	ROHS3 Compliant