STGD10HF60KD Description

The device STGD10HF60KD uses advanced power mesh technology to manufacture IGBT and Turbo2 ultra-fast high voltage technology to manufacture diodes. This combination achieves a very good tradeoff between turn-on loss and switching behavior, making the product an ideal choice for a variety of high-voltage applications operating at high frequencies.

STGD10HF60KD Features

? Designed for automotive applications and AEC-Q101 qualified

? Low on-voltage drop (VCE(sat))

? Low Cres / Cies ratio (no cross conduction susceptibility)

? Switching losses include diode recovery energy

? Short-circuit rated

? Very soft Ultrafast recovery anti-parallel diode

STGD10HF60KD Applications

? High frequency inverters

? SMPS and PFC in both hard switch and resonant topologies

? Motor drives

? Injection systems