BSP31,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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BSP31,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
SMD/SMT
ECCN Code
EAR99
Max Power Dissipation
1.3W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
100MHz
Base Part Number
BSP31
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.3W
Case Connection
COLLECTOR
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
100MHz
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
70V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Turn Off Time-Max (toff)
650ns
Turn On Time-Max (ton)
500ns
Collector-Base Capacitance-Max
20pF
Height
6.35mm
Length
6.35mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.432696
$1.432696
10
$1.351600
$13.516
100
$1.275094
$127.5094
500
$1.202919
$601.4595
1000
$1.134829
$1134.829
BSP31,115 Product Details
BSP31,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 5V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Parts of this part have transition frequencies of 100MHz.A breakdown input voltage of 60V volts can be used.Maximum collector currents can be below 1A volts.
BSP31,115 Features
the DC current gain for this device is 100 @ 100mA 5V the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 5V a transition frequency of 100MHz
BSP31,115 Applications
There are a lot of Nexperia USA Inc. BSP31,115 applications of single BJT transistors.