SI2323DS-T1

new-10%

Manufacturer part number:SI2323DS-T1

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 3.7A SOT23

Case Package:SOT-23

Datasheet:SI2323DS-T1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Supplier Device Package	SOT-23-3 (TO-236)
Weight	1.437803g
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	750mW Ta
Element Configuration	Single
Power Dissipation	1.25W
Turn On Delay Time	25 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	39mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1020pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3.7A Ta
Gate Charge (Qg) (Max) @ Vgs	19nC @ 4.5V
Rise Time	43ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	43 ns
Turn-Off Delay Time	71 ns
Continuous Drain Current (ID)	3.7A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-20V
Input Capacitance	1.02nF
Drain to Source Resistance	39mOhm
Rds On Max	39 mΩ
Height	1.02mm
Length	3.04mm
Width	1.4mm
RoHS Status	ROHS3 Compliant